Effect of Plasma Modulation on Si Chemical DryEtching in F$_2$ Remote Plasmas-Reference-Cited by-同舟云学术

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Effect of Plasma Modulation on Si Chemical DryEtching in F$_2$ Remote Plasmas

Published:2008-11-15 Issue:9(5) Volume:53 Page:2386-2390
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Yun Y.B.,Park S.M.,Lee N.-E.

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrophobic coating of surfaces by plasma polymerization in an RF plasma reactor with an outer planar electrode: synthesis, characterization and biocompatibility;Plasma Science and Technology;2017-06-20

2. Microwave plasma assisted process for cleaning and deposition in future semiconductor technology;IOP Conference Series: Materials Science and Engineering;2017-06

3. Thin Die Fabrication and Applications to Wafer Level System Integration;Materials for Advanced Packaging;2016-11-19

4. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2and SF6/O2;Advances in Materials Science and Engineering;2014

5. Enhancement of flexural stress and reduction of surface roughness through changes in gas concentrations during high-speed chemical dry thinning of silicon wafers;Thin Solid Films;2013-11

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