Doping of InP and GaInAs with S during metalorganic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342604
Reference6 articles.
1. Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure
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3. The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxy
4. Doping of InP and GaInAs during organometallic vapor‐phase epitaxy using disilane
5. Die Dissoziation des Schwefeldampfes
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3. Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires;Nano Letters;2011-05-23
4. Silicon doping of InGaAs grown by MOVPE using tertiarybutylarsine;Journal of Crystal Growth;1997-10
5. MOCVD of Compound Semiconductor Layers;Handbook of Compound Semiconductors;1995
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