Silicon doping of InGaAs grown by MOVPE using tertiarybutylarsine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Metalorganic precursors for vapour phase epitaxy
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5. Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors
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1. Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing*;Chinese Physics B;2021-02-01
2. Incorporation of Si during vapor phase epitaxy of III-V compounds: Evidence of an enthalpy-entropy compensation effect;Journal of Applied Physics;2018-09-07
3. Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications;Semiconductor Science and Technology;2018-04-16
4. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
5. InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine;Science China Mathematics;2002-05
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