OMVPE growth of InGaAsP materials for long wavelength detectors and emitters
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications
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4. Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. Double Floating Guard-Ring-Type InP/InGaAs Avalanche Photodiodes with Low-Resistance Ohmic Contacts;Journal of the Korean Physical Society;2007-06-15
3. Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts;Thin Solid Films;2006-08
4. Methods to improve the P/As compositional uniformity of InGaAsP thin films prepared by MOCVD;Journal of Crystal Growth;1996-10
5. Substitutional, interstitial, and neutral zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy;Journal of Applied Physics;1996-09-15
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