GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications-Reference-Cited by-同舟云学术

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GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

Published:1981-10 Issue:1 Volume:55 Page:64-73
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Duchemin J.P.,Hirtz J.P.,Razeghi M.,Bonnet M.,Hersee S.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. The Use of Metal-Organics in the Preparation of Semiconductor Materials

2. Proc. 7th Intern. Symp on GaAs and Related Compounds;Duchemin,1979

3. GaxIn1−xAsy P1−y/InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.

4. Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d.

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