The influence of the droplet composition on the vapor-liquid-solid growth of InAs nanowires on GaAs (1¯1¯1¯)B by metal-organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3033556
Reference26 articles.
1. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays
2. A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire
3. InP Nanowire/Polymer Hybrid Photodiode
4. The Growth Mechanism of Nanometer-scale GaAs, InAs, and AlGaAs Whiskers
5. MOVPE growth and real structure of vertical-aligned GaAs nanowires
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