Morphology characterization and growth of GaAs nanowires on Selective-area substrates-Reference-Cited by-同舟云学术

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Morphology characterization and growth of GaAs nanowires on Selective-area substrates

Published:2021-09 Issue: Volume:779 Page:138887
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Zeng Li-Na,Li Lin,Yang Yun-fan,Liu Zhao-yue,Li Zai-Jin,Zhao Zhi-bin,Chen Hao,Qiao Zhong-Liang,Qu Yi,Liu Guo-Jun

Funder

National Natural Science Foundation of China

National College Students Innovation and Entrepreneurship Training Program

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference22 articles.

1. Bottom-up Photonic Crystal Lasers

2. Optically pumped room-temperature GaAs nanowire lasers

3. Room-temperature lasing in a single nanowire with quantum dots

4. Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature

5. A III–V nanowire channel on silicon for high-performance vertical transistors

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1. High harmonic generations triggered by the intense laser field in GaAs/AlxGa1-xAs honeycomb quantum well wires;Materials Today Physics;2023-11

2. Preparation of elemental As from As-Sb fly ash using continuous reductive method with additive of lead oxide;Journal of Central South University;2022-09

3. Semiconductor Epitaxial Crystal Growth: Silicon Nanowires;21st Century Nanostructured Materials - Physics, Chemistry, Classification, and Emerging Applications in Industry, Biomedicine, and Agriculture;2022-04-20

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