A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire-Reference-Cited by-同舟云学术

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire

Published:2008-02-27 Issue:3 Volume:8 Page:872-875
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Nilsson Henrik A.¹,Duty Tim¹,Abay Simon¹,Wilson Chris¹,Wagner Jakob B.¹,Thelander Claes¹,Delsing Per¹,Samuelson Lars¹

Affiliation:

1. Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden, Microtechnology and Nanoscience, Chalmers University of Technology, S-412 96, Göteborg, Sweden, School of Physical Sciences, The University of Queensland, St. Lucia, 4072 Australia, and Polymer and Materials Chemistry/nCHREM, Lund University, Box 124, S-221 00, Lund, Sweden

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0731062

Reference26 articles.

1. Single-electron transistors: Electrostatic analogs of the DC SQUIDS

2. The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer

3. Noise in the Coulomb blockade electrometer

4. An ultrasensitive radio-frequency single-electron transistor working up to 4.2 K

5. Development and operation of the twin radio frequency single electron transistor for cross-correlated charge detection

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