The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363752
Reference18 articles.
1. InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition
2. Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices
3. Excitonic transitions in lattice-matchedGa1−xInxAsInPquantum wells
4. Excitonic transitions in strained-layerInxGa1−xAs/InP quantum wells
5. Diamagnetic shift and oscillator strength of two-dimensional excitons under a magnetic field inIn0.53Ga0.47As/InP quantum wells
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1. Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors;Applied Physics Letters;2008-11-17
2. Tuning of the detection wavelength in quantum dots-in-a-well infrared photodetectors;SPIE Proceedings;2008-04-03
3. Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection;SPIE Proceedings;2006-09-28
4. Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors;Applied Physics Letters;2006-05-22
5. Forbidden transitions and the effective masses of electrons and holes in In1−xGaxAs/InP quantum wells with compressive strain;Journal of Applied Physics;2003-01-15
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