Forbidden transitions and the effective masses of electrons and holes in In1−xGaxAs/InP quantum wells with compressive strain
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1527709
Reference24 articles.
1. Theory of heavy-hole magnetoexcitons in GaAs-(Al,Ga)As quantum-well heterostructures
2. Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structures
3. Conduction-band and valence-band structures in strainedIn1−xGaxAs/InP quantum wells on (001) InP substrates
4. Diamagnetic shift and oscillator strength of two-dimensional excitons under a magnetic field inIn0.53Ga0.47As/InP quantum wells
5. The effective masses in strained InGaAs/InP quantum wells deduced from magnetoexcitation spectroscopy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells;Journal of Applied Physics;2015-10-28
2. Photoreflectance spectroscopy with a step-scan Fourier-transform infrared spectrometer: Technique and applications;Review of Scientific Instruments;2007-01
3. Spectroscopic derivative in optical study of GaInAs/InP and GaInP/AlGaInP multip le quantum wells;Acta Physica Sinica;2003
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