An activation energy study of the microstructural changes in Al‐1%Si interconnects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356291
Reference14 articles.
1. Stress relaxation and hillock growth in thin films
2. Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history
3. Mechanical stress as a function of temperature in aluminum films
4. Mechanical properties of thin films
5. Voiding due to thermal stress in narrow conductor lines
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1. The kinetics of the early stages of electromigration and concurrent temperature induced processes in thin film metallisations studied by means of an in-situ high resolution resistometric technique;Microelectronics Reliability;1999-11
2. The influence of addition elements on the early resistance changes observed during electromigration testing of Al metal lines;Microelectronics Reliability;1998-02
3. Non‐linear resistance behavior in the early stages and after electromigration in Al‐Si lines;Journal of Applied Physics;1996-07
4. A re‐interpretation of the existence of a spectrum of activation energies for the microstructural changes in Al 1% Si lines;Journal of Applied Physics;1996-02-15
5. Recovery of electric resistance degraded by electromigration;Journal of Applied Physics;1995-09-15
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