Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103554
Reference24 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e.
3. Nonequivalent heterointerfaces in AlGaAs/GaAs double barrier resonant tunnelling diodes grown by metalorganic vapour phase epitaxy
4. Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures
5. Interface roughness scattering in GaAs/AlAs quantum wells
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1. Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well;Applied Physics Letters;2017-06-26
2. Interplay between quantum well width and interface roughness for electron transport mobility in GaAs quantum wells;Applied Physics Letters;2016-12-05
3. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016
4. Molecular beam epitaxy;Molecular Beam Epitaxy;2013
5. Molecular Beam Epitaxy: An Overview;Comprehensive Semiconductor Science and Technology;2011
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