Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e.-Reference-Cited by-同舟云学术

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Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e.

Published:1980 Issue:19 Volume:16 Page:753
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Morkoç H.,Witkowski L.C.,Drummond T.J.,Stanchak C.M.,Cho A.Y.,Streetman B.G.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19800535?crawler=true&mimetype=application/pdf

Reference5 articles.

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of AlGaAs/InGaAs/GaAs-Based PHEMT for High Frequency Application;Lecture Notes in Electrical Engineering;2021

2. Negative Differential Resistance Devices and Circuits;Comprehensive Semiconductor Science and Technology;2011

3. Degradation of GaAs/AlGaAs quantized Hall resistors with alloyed AuGe/Ni contacts;Journal of Research of the National Institute of Standards and Technology;1998-03

4. Photoluminescence spectroscopy of crystalline semiconductors;Materials Science and Engineering: R: Reports;1997-03

5. Minority carrier lifetimes in molecular beam epitaxy grown AlxGa1−xAs/GaAs double heterostructures doped with aluminum;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-07

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