Nonequivalent heterointerfaces in AlGaAs/GaAs double barrier resonant tunnelling diodes grown by metalorganic vapour phase epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19891143?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of interface flatness and abruptness on optical and electrical characteristics of GaAs/AlGaAs quantum structures grown by metalorganic vapor phase epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-07
2. Flow modulation epitaxy of GaxIn1-xAs/AlAs heterostructures on InP for resonant tunneling diodes;Applied Surface Science;1994-12
3. GaxIn1−xAs/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic chemical vapor deposition;Applied Physics Letters;1994-10-24
4. Growth and characterization of double barrier resonant tunnelling diodes;Journal of Crystal Growth;1991-01
5. Size effects in microstructured resonant tunneling diodes;Solid-State Electronics;1990-11
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