Size effects in microstructured resonant tunneling diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
2. Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures
3. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic
4. Proc. 16th Int. Symp. on GaAs and Related Compounds;Schnell,1990
5. Room-temperature operation of AlGaAs/GaAs resonant tunnelling structures grown by metalorganic vapour-phase epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of series and parallel resistances on the current-voltage characteristics of small-area air-bridge resonant tunneling diode;Journal of Applied Physics;2008
2. Optical modulation with a resonant tunnelling diode;IEE Proceedings - Optoelectronics;1996-02-01
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