GaxIn1−xAs/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112748
Reference12 articles.
1. Resonant tunneling in quantum heterostructures: electron transport, dynamics, and device applications
2. Bandgap and interface engineering for advanced electronic and photonic devices
3. A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
4. Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers
5. The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
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1. Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates;Japanese Journal of Applied Physics;2014-02-24
2. High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy;Journal of Crystal Growth;2011-12
3. Quantum dot resonant tunneling diodes for telecom wavelength single-photon detection;SPIE Proceedings;2007-09-26
4. Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection;Applied Physics Letters;2007-08-13
5. Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers;Japanese Journal of Applied Physics;2005-10-11
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