Interplay between quantum well width and interface roughness for electron transport mobility in GaAs quantum wells
Author:
Affiliation:
1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Funder
Division of Electrical, Communications and Cyber Systems (ECCS)
Gordon and Betty Moore Foundation (Gordon E. and Betty I. Moore Foundation)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4971824
Reference21 articles.
1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
2. Two-Dimensional Magnetotransport in the Extreme Quantum Limit
3. Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures
4. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
5. Effect of substrate temperature on migration of Si in planar‐doped GaAs
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