Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4776210
Reference19 articles.
1. Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
2. Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy
3. Effects of dislocations on electron transport in wurtzite InN
4. The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN
5. Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer
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1. Sensing behaviors of transition metal decorated InN monolayer upon $$\hbox {SO}_{2}$$ and NO molecules: a first-principles study;The European Physical Journal B;2021-02
2. Growth of InN ultrathin films on AlN for the application to field-effect transistors;AIP Advances;2020-12-01
3. Emergence of high quality sputtered III-nitride semiconductors and devices;Semiconductor Science and Technology;2019-08-12
4. Comparative studies of wurtzite and zincblende indium nitride/yttria-stabilized zirconia interfacial and electronic properties by first-principles calculations;Japanese Journal of Applied Physics;2018-09-03
5. Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition;physica status solidi (b);2017-09-11
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