Effects of dislocations on electron transport in wurtzite InN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2840051
Reference21 articles.
1. Potential performance of indium-nitride-based devices
2. Indium nitride (InN): A review on growth, characterization, and properties
3. Progress and prospects of group-III nitride semiconductors
4. Deep acceptors trapped at threading-edge dislocations in GaN
5. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
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2. Intrinsic thermal conductivity and its anisotropy of wurtzite InN;Applied Physics Letters;2014-08-25
3. Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates;Thin Solid Films;2014-01
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