Deep acceptors trapped at threading-edge dislocations in GaN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.12571/fulltext
Reference25 articles.
1. Mechanism of Yellow Luminescence in GaN
2. Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
3. On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN
4. Spatial distribution of the luminescence in GaN thin films
5. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
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