Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition
Author:
Affiliation:
1. Institute of Industrial Science, The University of Tokyo; Tokyo 153-8505 Japan
2. PRESTO, Japan Science and Technology Agency; Saitama 332-0012 Japan
3. ACCEL, Japan Science and Technology Agency; Tokyo 102-0076 Japan
Funder
Japan Society for the Promotion of Science
Japan Science and Technology Corporation
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
2. P-type InGaN across the entire alloy composition range
3. Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth
4. Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy
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