Direct observation of voids in the vacancy excess region of ion bombarded silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1352662
Reference18 articles.
1. Defect distribution in ion-implanted silicon. A Monte Carlo simulation
2. Implantation and transient B diffusion in Si: The source of the interstitials
3. The mechanism of iron gettering in boron‐doped silicon
4. Evolution from point to extended defects in ion implanted silicon
5. Impurity gettering to secondary defects created by MeV ion implantation in silicon
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