Laser damage mechanism and in situ observation of stacking fault relaxation in a β-Ga2O3 single crystal by the EFG method-Reference-Cited by-同舟云学术

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Laser damage mechanism and in situ observation of stacking fault relaxation in a β-Ga2O3 single crystal by the EFG method

Published:2021 Issue:20 Volume:23 Page:3724-3730
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Fu Bo¹²³⁴⁵,He Gaohang⁶⁷⁸⁴,Mu Wenxiang¹²³⁴,Li Yang¹²³⁴,Feng Boyuan⁶⁷⁸⁴,Zhang Kaihui⁹¹⁰¹¹⁴,Wang Huanyang¹²³⁴,Zhang Jin¹²³⁴,Zhang Shaojun¹²³⁴,Jia Zhitai¹²³⁴¹²^ORCID,Shi Yujun⁵¹³¹⁴¹⁵^ORCID,Li Yanbin¹²¹⁶⁴¹⁷¹⁸,Ding Sunan⁶⁷⁸⁴,Tao Xutang¹²³⁴¹⁹^ORCID

Affiliation:

1. State Key Laboratory of Crystal Materials

2. Shandong University

3. Jinan

4. China

5. Department of Chemistry

6. Suzhou Institute of Nano-Tech and Nano-Bionics

7. Chinese Academy of Sciences

8. Suzhou 215 123

9. School of Materials Science and Engineering

10. Taiyuan University of Technology

11. Taiyuan 030024

12. Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology

13. University of Calgary

14. Calgary

15. Canada

16. Xuzhou

17. Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering

18. Jiangsu Normal University

19. Shenzhen Research Institute of Shandong University

Abstract

We for the first time built up a laser damage mechanism and in situ observed stacking fault relaxation in a β-Ga₂O₃ single crystal.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Key Technology Research and Development Program of Shandong

International Science and Technology Cooperation Program of Jiangsu Province

Special Project for Research and Development in Key areas of Guangdong Province

Higher Education Discipline Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00131K

Reference53 articles.

1. Perspective—Opportunities and Future Directions for Ga2O3

2. A review of Ga2O3materials, processing, and devices

3. Recent developments in compact ultrafast lasers

4. Anisotropic thermal conductivity in single crystal β-gallium oxide

5. An extended application of β-Ga2O3 single crystals to the laser field: Cr4+:β-Ga2O3 utilized as a new promising saturable absorber

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2. Patterning the surface structure of transparent hard-brittle material β-Ga2O3 by ultrashort pulse laser;Ceramics International;2022-10

3. A review of ultrawide bandgap materials: properties, synthesis and devices;Oxford Open Materials Science;2022

4. Toward emerging gallium oxide semiconductors: A roadmap;Fundamental Research;2021-11

5. Properties and perspectives of ultrawide bandgap Ga2O3 in optoelectronic applications;Chinese Journal of Physics;2021-10

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