Thermal emission of charges at Si3N4‐GaAs interfaces plasma pretreated with H2, Ar, and Ar+H2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357376
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1. Zero-field electron Larmor precession in NiFe/SiN/GaAs nanohybrid structure at room temperature;Applied Physics Express;2018-05-17
2. Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements;Materials Science-Poland;2013-08
3. Attempts to correlate hydrogen plasma-induced and Si3N4/GaAs interface-related surface states: a charge deep-level transient spectroscopy study;Applied Surface Science;1997-01
4. Depletion mode optoelectronic modulation spectroscopy;Journal of Applied Physics;1996-12-15
5. A study on thermal emission of charges at Si3N4—GaAs interfaces after annealing in N2 and N2 + H2 mixtures;Materials Science and Engineering: B;1996-09
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