Pulsed field effect channel current transients in plasma-anodized alumina/GaAs metal/insulator/ semiconductor field effect transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Insulating Films on Semiconductors;Lee,1981
2. Electrical properties of the gallium arsenide–insulator interface
3. Surface potential of anodizedp‐GaAs MOS capacitors
4. Oxide and interface properties of anodic oxide MOS structures on III–V compound semiconductors
5. Inst. Phys. Conf. Ser. 50;Bayraktaroglu,1979
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of plasma pretreatments on interface state electron emission in Si3N4–GaAs structures;Journal of Applied Physics;1995-06
2. Thermal emission of charges at Si3N4‐GaAs interfaces plasma pretreated with H2, Ar, and Ar+H2;Journal of Applied Physics;1994-10
3. Properties of AlNxOy/GaAs Structures Made by Plasma Ntridation of Evaporated Aluminium Films;physica status solidi (a);1986-07-16
4. The self-priming operation of GaAs IGFETs in the quasi-normally-off mode;International Journal of Electronics;1985-07
5. Electrical properties of plasma-deposited polysiloxane and metal/plasma polysiloxane/GaAs structures;Thin Solid Films;1984-10
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