Depletion mode optoelectronic modulation spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363743
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1. A physical surface-potential-based drain current model for polysilicon thin-film transistors;Journal of Semiconductors;2012-03
2. Comparisons using optoelectronic modulation spectroscopy of n-type GaAs epitaxial layers formed on buffer layers prepared at normal and low temperatures;Journal of Electronic Materials;2003-03
3. The GaN yellow luminescence centre observed using optoelectronic modulation spectroscopy;Journal of Physics D: Applied Physics;2002-03-20
4. Observations of deep levels in 4H-SiC using optoelectronic modulation spectroscopy;Journal of Electronic Materials;2001-10
5. Depth defined optoelectronic modulation spectroscopy;Journal of Electronic Materials;2000-05
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