Investigation of the growth of gallium arsenide thin films by metalorganic molecular beam epitaxy using gallane‐quinuclidine adduct
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109754
Reference16 articles.
1. Advances in MOVPE, MBE, and CBE
2. New aluminium precursors for MOMBE (CBE): a comparative study
3. Growth and MBMS studies of reaction mechanisms for InxGa1−xAs CBE
4. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy
5. Applications of MBMS and surface spectroscopic techniques in the study of reaction mechanisms in CBE; investigations of the reactivity of tritertiarybutylgallium and triisobutylgallium as alternative precursors for epilayer growth
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1. Metalorganic chemical-vapour-deposition (MOCVD) of InGaAs, BGaAs, and BInGaAs: Quantum chemical calculations on the mechanisms;Journal of Crystal Growth;2007-06
2. Molecular structures of free quinuclidine and its adducts with metal trihydrides, MH3 (M = B, Al or Ga), studied by gas-phase electron diffraction, X-ray diffraction and quantum chemical calculations;Dalton Transactions;2007
3. Hydrides of the Main-Group Metals: New Variations on an Old Theme;Chemical Reviews;2001-11-01
4. Recent advances in the chemistry of the Group 13 metals: hydride derivatives and compounds involving multiply bonded Group 13 metal atoms;Coordination Chemistry Reviews;1999-08
5. Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching;Journal of Crystal Growth;1998-06
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