Applications of MBMS and surface spectroscopic techniques in the study of reaction mechanisms in CBE; investigations of the reactivity of tritertiarybutylgallium and triisobutylgallium as alternative precursors for epilayer growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy
2. Surface chemical processes in metal organic molecular‐beam epitaxy; Ga deposition from triethylgallium on GaAs(100)
3. Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As
4. Products of thermal decomposition of triethylgallium and trimethylgallium adsorbed on Ga-stabilized GaAs(100)
5. Growth and MBMS studies of reaction mechanisms for InxGa1−xAs CBE
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