Photoluminescence studies of impurity transitions in AlGaN alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337856
Reference19 articles.
1. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
2. Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7)
3. Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)
4. Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
5. Gallium vacancies and the yellow luminescence in GaN
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