A new approach in impurity doping of 4H-SiC using silicidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4854816
Reference25 articles.
1. Reliability and performance limitations in SiC power devices
2. Commercial SiC device processing: Status and requirements with respect to SiC based power devices
3. Some Critical Materials and Processing Issues in SiC Power Devices
4. Surface roughening in ion implanted 4H-silicon carbide
5. Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus
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1. Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC;Materials Science in Semiconductor Processing;2021-08
2. A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp2-carbon;Applied Physics Letters;2020-07-13
3. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion;Journal of Engineering Physics and Thermophysics;2020-07
4. Surface plasmons enhanced band-edge emission in Ni nanoparticles decorated ZnO nanorods arrays architecture;Journal of Luminescence;2020-06
5. Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma Treatment;IEEE Transactions on Electron Devices;2019-03
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