Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2199615
Reference20 articles.
1. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
2. Electrical characterization of germanium p-channel MOSFETs
3. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
4. A TaN–<tex>$hbox HfO_2$</tex>–Ge pMOSFET With Novel<tex>$hbox SiH_4$</tex>Surface Passivation
5. Characterization of nickel Germanide thin films for use as contacts to p-channel Germanium MOSFETs
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