High-performance germanium n + /p junction by nickel-induced dopant activation of implanted phosphorus at low temperature-Reference-Cited by-同舟云学术

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High-performance germanium n + /p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Published:2016-05 Issue:5 Volume:25 Page:057304
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Huang Wei,Lu Chao,Yu Jue,Wei Jiang-Bin,Chen Chao-Wen,Wang Jian-Yuan,Xu Jian-Fang,Wang Chen,Li Cheng,Chen Song-Yan,Liu Chun-Li,Lai Hong-Kai

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/25/5/057304/pdf

Reference9 articles.

1. P implantation doping of Ge: Diffusion, activation, and recrystallization

2. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

3. Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

4. High performance n+/p and p+/n germanium diodes at low-temperature activation annealing

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging;Journal of Physics D: Applied Physics;2024-01-30

2. Improved performance of Ge n + /p diode by combining laser annealing and epitaxial Si passivation;Chinese Physics B;2018-01

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