Source of Metals in Si and Ge Crystal Growth and Processing
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Publisher
Springer International Publishing
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http://link.springer.com/content/pdf/10.1007/978-3-319-93925-4_3
Reference130 articles.
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2. A.A. Istratov, T. Buonassisi, R.J. McDonald, A.R. Smith, R. Schindler, J.A. Rand, J.P. Kalejs, E.R. Weber, Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length. J. Appl. Phys. 94, 6552–6559 (2003). https://doi.org/10.1063/1.1618912
3. P.F. Schmidt, C.S. Pearce, A neutron activation analysis study of the sources of transition group metal contamination in the silicon device manufacturing process. J. Electrochem. Soc. 128, 630–637 (1981). https://doi.org/10.1149/1.2127472
4. A.A. Istratov, T. Buonassisi, M.D. Pickett, M. Heuer, E.R. Weber, Control of metal impurities in “dirty” multicrystalline silicon for solar cells. Mater. Sci. Eng. B 134, 282–286 (2006). https://doi.org/10.1016/j.mseb.2006.06.023
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