Reduction of stacking fault density in m-plane GaN grown on SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2985816
Reference19 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes
3. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes
4. High Power and High External Efficiencym-Plane InGaN Light Emitting Diodes
5. Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths ofm-Plane GaN
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