High Power and High External Efficiencym-Plane InGaN Light Emitting Diodes-Reference-Cited by-同舟云学术

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High Power and High External Efficiencym-Plane InGaN Light Emitting Diodes

Published:2007-02-09 Issue:No. 7 Volume:46 Page:L126-L128
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Schmidt Mathew C.,Kim Kwang-Choong,Sato Hitoshi,Fellows Natalie,Masui Hisashi,Nakamura Shuji,DenBaars Steven P.,Speck James S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference11 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

5. Stability of (1\bar100)m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition

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4. Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers;Journal of Applied Physics;2023-04-10

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