Stability of (1\bar100)m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Stability of (1\bar100)m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition

Published:2006-11-08 Issue:11 Volume:45 Page:8644-8647
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Imer Bilge,Wu Feng,Craven Michael D.,Speck James S.,DenBaars Steven P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes;Chemical Communications;2023

2. Chemical and morphological characterization of the anodic oxidation of n-GaN in inorganic electrolytes;New Journal of Chemistry;2022

3. Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid;RSC Advances;2022

4. Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions;Applied Physics Letters;2020-05-18

5. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers;Japanese Journal of Applied Physics;2019-05-22

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