Chemical and morphological characterization of the anodic oxidation of <i>n</i>-GaN in inorganic electrolytes-Reference-Cited by-同舟云学术

Chemical and morphological characterization of the anodic oxidation of n-GaN in inorganic electrolytes

Published:2022 Issue:48 Volume:46 Page:23013-23018
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Shushanian Artem¹^ORCID,Iida Daisuke²^ORCID,Han Yu¹^ORCID,Ohkawa Kazuhiro²^ORCID

Affiliation:

1. Chemistry Program, Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia

2. Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia

Abstract

To study the nature of electrochemical property of III-nitrides, we examined here the behaviour of a n-GaN anodic oxidation reaction within a voltage range of 5–20 V in inorganic electrolytes as the pH value varied from 0 to 13.

Funder

King Abdullah University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NJ/D2NJ04740C

Reference40 articles.

1. F.Medjdoub , J.-F.Carlin , M.Gonschorek , E.Feltin , M. A.Py , D.Ducatteau , C.Gaquiere , N.Grandjean and E.Kohn , in 2006 International Electron Devices Meeting , IEEE , 2006 , pp. 1–4

2. Stability of (1\bar100)m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition

3. Testing the Temperature Limits of GaN-Based HEMT Devices

4. Thermodynamic Oxidation and Reduction Potentials of Photocatalytic Semiconductors in Aqueous Solution

5. Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage;Small;2024-04-21

2. Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes;Chemical Communications;2023