Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2213176
Reference28 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. GaInNAs(Sb) long wavelength communications lasers
3. Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy
4. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
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1. Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs;Journal of Applied Physics;2019-10-14
2. The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys;Journal of Physics D: Applied Physics;2016-02-11
3. Modeling of Ga1−xInxAs1−y−zNySbz/GaAs quantum well properties for near-infrared lasers;Materials Science in Semiconductor Processing;2013-12
4. Composition control of quinary GaInNAsSb alloy grown by molecular beam epitaxy;physica status solidi (c);2013-10-18
5. GaInNAs(Sb) Long-Wavelength VCSELs;Springer Series in Optical Sciences;2012-10-16
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