Composition control of quinary GaInNAsSb alloy grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Composition control of quinary GaInNAsSb alloy grown by molecular beam epitaxy

Published:2013-10-18 Issue:11 Volume:10 Page:1369-1372
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Miyashita Naoya,Ahsan Nazmul,Islam Muhammad Monirul,Okada Yoshitaka

Funder

Incorporated Administrative Agency New Energy and Industrial Technology Development Organization

Ministry of Economy, Trade and Industry (METI), Japan

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300283/fullpdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping;International Journal of the Society of Materials Engineering for Resources;2022-10-31

2. Collection of photocarriers in intermediate band solar cells: experiments and equivalent circuit analysis;Journal of Photonics for Energy;2022-07-01

3. Incorporation of hydrogen into MBE-grown dilute nitride GaInNAsSb layers in a MOCVD growth ambient;Solar Energy Materials and Solar Cells;2018-10

4. N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells;Japanese Journal of Applied Physics;2018-07-11

5. Multiband modification of III-V dilute nitrides for IBSC application;SPIE Proceedings;2017-03-29

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