Suppression of surface recombination in InP/GaAsSb double heterojunction bipolar transistors with InP–InAlAs composite emitter
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3374637
Reference7 articles.
1. InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs
2. Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter
3. High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors
4. Surface Recombination Currents in “Type-II” NpN InP–GaAsSb–InP Self-Aligned DHBTs
5. Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependent surface photovoltage spectra of type I GaAs1−xSbx/GaAs multiple quantum well structures;Journal of Applied Physics;2013-02-21
2. Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors;physica status solidi (a);2012-05-03
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