Etching characteristics of organic low-k films interpreted by internal parameters employing a combinatorial plasma process in an inductively coupled H2/N2 plasma-Reference-Cited by-同舟云学术

Etching characteristics of organic low-k films interpreted by internal parameters employing a combinatorial plasma process in an inductively coupled H2/N2 plasma

Published:2010-06 Issue:11 Volume:107 Page:113310
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Moon Chang Sung,Takeda Keigo,Sekine Makoto,Setsuhara Yuichi,Shiratani Masaharu,Hori Masaru

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3415535

Reference30 articles.

1. Combinatorial Plasma Etching Process

2. Review of inductively coupled plasmas for plasma processing

3. A Small Microwave Plasma Source for Long Column Production without Magnetic Field

4. Ion Assisted Deposition of Crystalline TiNi Thin Films by Electron Cyclotron Resonance Plasma Enhanced Sputtering

5. RF Plasma Production at Ultralow Pressures with Surface Magnetic Confinement

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