Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369520
Reference31 articles.
1. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
2. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
3. Above-room-temperature optically pumped midinfrared W lasers
4. High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors
5. AlSb/InAs HEMTs using modulation InAs(Si)-doping
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2. Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices;Nanotechnology;2019-12-16
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