Metal‐oxide‐semiconductor field‐effect transistors fabricated using self‐aligned silicide technology-Reference-Cited by-同舟云学术

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Metal‐oxide‐semiconductor field‐effect transistors fabricated using self‐aligned silicide technology

Published:1985-09 Issue:5 Volume:47 Page:527-529
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsaur B‐Y.,Anderson C. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.96115

Reference7 articles.

1. Selective tungsten silicide formation by ion‐beam mixing and rapid thermal annealing

2. Transient annealing of arsenic‐implanted silicon using a graphite strip heater

3. Reaction of thin metal films with SiO2 substrates

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3. Ni silicide nanowires analysis by atom probe tomography;Microelectronic Engineering;2014-05

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