Progress in the understanding of Ni silicide formation for advanced MOS structures-Reference-Cited by-同舟云学术

Progress in the understanding of Ni silicide formation for advanced MOS structures

Published:2014-01 Issue:1 Volume:211 Page:152-165
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Mangelinck D.¹,Hoummada K.¹,Panciera F.¹²,El Kousseifi M.¹,Blum I.¹,Descoins M.¹,Bertoglio M.¹,Portavoce A.¹,Perrin C.¹,Putero M.¹

Affiliation:

1. IM2NP; Aix Marseille Université; CNRS; Case 142 13397 Marseille cedex 20 France

2. STMicroelectronics; 850 rue Jean Monnet 38926 Crolles cedex France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference73 articles.

1. Silicides and ohmic contacts

2. Towards implementation of a nickel silicide process for CMOS technologies

3. Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition

4. New salicidation technology with Ni(Pt) alloy for MOSFETs

5. Kinetics of formation of silicides: A review

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