Effects of stress on the growth of TiSi2 thin films on (001)Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123565
Reference5 articles.
1. Silicides and ohmic contacts
2. Stresses, curvatures, and shape changes arising from patterned lines on silicon wafers
3. Epitaxial growth of NiSi2 on (111)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography
4. Epitaxial growth of CoSi2on (111)Si inside miniature‐size oxide openings by rapid thermal annealing
5. Formation of epitaxial NiSi2of single orientation on (111) Si inside miniature size oxide openings
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1. Insertion of Hafnium Interlayer to Improve the Thermal Stability of Ultrathin TiSi x in TiSi x /n+-Si Ohmic Contacts;IEEE Transactions on Electron Devices;2022-06
2. Width-dependent anomalous CoSix sheet resistance change by Ti and TiN capping process;Thin Solid Films;2006-03
3. Effects of stress on the formation and growth of nickel silicides in Ni thin films on (001)Si;Materials Science and Engineering: A;2005-11
4. Stress evolution in Co/Ti/Si system;Materials Chemistry and Physics;2004-11
5. Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2Thin Films Grown on p-Si Substrates;Japanese Journal of Applied Physics;2003-10-09
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