Formation of epitaxial NiSi2of single orientation on (111) Si inside miniature size oxide openings
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98218
Reference13 articles.
1. Problems with Ultraminiaturized Transistors
2. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
3. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
4. Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
5. Control of a natural permeable CoSi2base transistor
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3. Formation and Characterization of Periodic Arrays of Nickel Silicide Nanodots on Si(111) Substrates;Japanese Journal of Applied Physics;2009-06-22
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