Formation and Characterization of Periodic Arrays of Nickel Silicide Nanodots on Si(111) Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. Investigation of NiSi and TiSi as CMOS gate materials
2. Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator
3. Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices
4. Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
5. Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies
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1. Characterization and oxidation behaviour of nanostructured La2(Zr0.7Ce0.3)2O7/YSZ coatings prepared by calcined precursor precipitate plasma spraying;Surface Engineering;2020-12-22
2. Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si1−xCx layers on Si(100);Applied Surface Science;2012-09
3. Enhanced formation and morphological stability of low-resistivity CoSi2 nanodot arrays on epitaxial Si0.7Ge0.3 virtual substrate;Materials Chemistry and Physics;2011-10
4. Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer;Applied Surface Science;2011-08
5. The fabrication of metal silicide nanodot arrays using localized ion implantation;Nanotechnology;2010-11-10
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