Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology-Reference-Cited by-同舟云学术

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Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology

Published:2014 Issue: Volume: Page:244-301
ISSN:
Container-title:Metallic Films for Electronic, Optical and Magnetic Applications
language:
Short-container-title:

Author:

Zhang S.-L.,Zhang Z.

Publisher

Elsevier

Reference189 articles.

1. Stability of C54 titanium germanosilicide on silicon-germanium alloy substrate;Aldrich;J Appl Phys,1995

2. Interface stability of Ti(SiGe)2 and SiGe alloys: tie lines in the ternary equilibrium diagram;Aldrich;Phys Rev B,1996

3. Study of the diffusion path during the lateral growth in the salicide process;Bakli;Appl Surf Sci,1991

4. Thermochemical Properties of Inorganic Substances;Barin,1973

5. Thermochemical Properties of Inorganic Substances, Supplement;Barin,1977

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2. Role of interfacial nickel silicides in shaping magnetic anisotropy in nickel films grown on Silicon substrates;Journal of Magnetism and Magnetic Materials;2023-01

3. Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis;Small;2022-02-21

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