Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts-Reference-Cited by-同舟云学术

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Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Published:2010-02-15 Issue:10 Volume:21 Page:105701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Habicht S,Zhao Q T,Feste S F,Knoll L,Trellenkamp S,Ghyselen B,Mantl S

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=10/a=105701/pdf

Reference20 articles.

1. Uniaxial-process-induced strained-Si: extending the CMOS roadmap

2. Ni2Si nanowires of extraordinarily low resistivity

3. Controlled formation and resistivity scaling of nickel silicide nanolines

4. Orientation dependence of nickel silicide formation in contacts to silicon nanowires

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Schottky barrier transistor in emerging electronic devices;Nanotechnology;2023-06-15

2. Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices;ACS Applied Nano Materials;2021-04-22

3. Linewidth related resistivities and growth behavior of nickel silicide nanowires by solid state reaction between Ni and electron-beam lithography prepared Si nanowires;Thin Solid Films;2021-04

4. Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing;2020 Device Research Conference (DRC);2020-06

5. Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si;Nanotechnology;2020-02-28

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