Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices-Reference-Cited by-同舟云学术

Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices

Published:2021-04-22 Issue:5 Volume:4 Page:4371-4378
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Simon Maik¹²^ORCID,Mizuta Ryo³,Fan Ye³,Tahn Alexander²⁴,Pohl Darius²⁴,Trommer Jens¹²^ORCID,Hofmann Stephan³^ORCID,Mikolajick Thomas¹²,Weber Walter M.¹²^ORCID

Affiliation:

1. NaMLab gGmbH, Nöthnitzer Street 64a, 01187 Dresden, Germany

2. Technische Universität Dresden, Center for Advancing Electronics Dresden (CfAED), 01062 Dresden, Germany

3. Department of Engineering, University of Cambridge, Trumpington Street, CB2 1PZ Cambridge, U.K.

4. Dresden Center for Nanoanalysis (DCN), Technische Universität Dresden, Helmholtzstraße 18, 01062 Dresden, Germany

Funder

Engineering and Physical Sciences Research Council

Deutscher Akademischer Austauschdienst

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c03072

Reference32 articles.

1. Electrical spin injection and transport in semiconductor nanowires: challenges, progress and perspectives

2. Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications

3. Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical Sensing

4. NiSi salicide technology for scaled CMOS

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